Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SI1056X-T1-GE3
BESCHREIBUNG
MOSFET N-CH 20V SC89-6
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 1.32A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000

Technische Daten

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.32A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
89mOhm @ 1.32A, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
236mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-89 (SOT-563F)
Package / Case
SOT-563, SOT-666
Base Product Number
SI1056

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Andere Namen

SI1056X-T1-GE3CT
SI1056XT1GE3
SI1056X-T1-GE3DKR
SI1056X-T1-GE3TR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI1056X-T1-GE3

Dokumente und Medien

Datasheets
1(SI1056X)
Environmental Information
()
PCN Obsolescence/ EOL
1(PCN- SIL-0582013 05/Dec/2013)
HTML Datasheet
1(SI1056X)

Menge Preis

-

Stellvertreter

Teil Nr. : SI1062X-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 118,010
Einzelpreis. : $0.43000
Ersatztyp. : Similar
Teil Nr. : SSM6K202FE,LF
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 21,691
Einzelpreis. : $0.44000
Ersatztyp. : Similar