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ChinaFQP5N60C
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQP5N60C
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 4
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 4.5A (Tc) 100W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
417
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQP5N60C
ONSONSFQP5N60C
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQP5N60C
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 417
Einzelpreis: $0.72
Verpackung: Bulk
MinMultiplikator: 417
Verpackung: Bulk
MinMultiplikator: 417
Stellvertreter
-