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China2SC6017-H-TL-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SC6017-H-TL-E
BESCHREIBUNG
NPN EPITAXIAL PLANAR SILICON
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 50 V 10 A 200MHz 950 mW Surface Mount DPAK/TP-FA
HERSTELLER
Sanyo
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,314
Lagerbestände
Technische Daten
Mfr
Sanyo
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
360mV @ 250mA, 5A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A, 2V
Power - Max
950 mW
Frequency - Transition
200MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
DPAK/TP-FA
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
ONSSNY2SC6017-H-TL-E
2156-2SC6017-H-TL-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Sanyo 2SC6017-H-TL-E
Dokumente und Medien
Datasheets
1(2SA2169-E Datasheet)
Menge Preis
QUANTITÄT: 1314
Einzelpreis: $0.27
Verpackung: Bulk
MinMultiplikator: 1314
Verpackung: Bulk
MinMultiplikator: 1314
Stellvertreter
-