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ChinaBSV80
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSV80
BESCHREIBUNG
JFET N-CH TO18
DETAILIERTE BESCHREIBUNG
JFET N-Channel 350 mW Through Hole TO-18
HERSTELLER
Central Semiconductor Corp
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
Central Semiconductor Corp
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Drain (Idss) @ Vds (Vgs=0)
10 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id
1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds
5pF @ 10V
Resistance - RDS(On)
60 Ohms
Power - Max
350 mW
Operating Temperature
-65°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Supplier Device Package
TO-18
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/JFETs/Central Semiconductor Corp BSV80
Dokumente und Medien
Datasheets
1(BSV79, BSV80)
Environmental Information
1(RoHS Cert)
PCN Obsolescence/ EOL
1(Mult Dev EOL 18/Jan/2019)
HTML Datasheet
1(BSV79, BSV80)
Menge Preis
-
Stellvertreter
-