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ChinaAUIRFS8403TRL
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
AUIRFS8403TRL
BESCHREIBUNG
MOSFET N-CH 40V 123A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 123A (Tc) 99W (Tc) Surface Mount PG-TO263-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
123A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
93 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3183 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
99W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
INFIRFAUIRFS8403TRL
SP001518080
IFAUIRFS8403TRL
2156-AUIRFS8403TRL
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AUIRFS8403TRL
Dokumente und Medien
Datasheets
1(AUIRFS(L)8403)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(AUIRFS(L)8403)
Simulation Models
1(AUIRFS8403 Saber Model)
Menge Preis
-
Stellvertreter
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