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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
ZXMNS3BM832TA
BESCHREIBUNG
MOSFET N-CH 30V 2A 8MLP
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 2A (Ta) 1W (Ta) Surface Mount 8-MLP (3x2)
HERSTELLER
Diodes Incorporated
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
180mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
2.9 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
314 pF @ 15 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-MLP (3x2)
Package / Case
8-VDFN Exposed Pad
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ZXMNS3BM832CT
ZXMNS3BM832TA-ND
ZXMNS3BM832DKR
ZXMNS3BM832TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated ZXMNS3BM832TA
Dokumente und Medien
Datasheets
1(ZXMNS3BM832)
Environmental Information
1(Diodes Environmental Compliance Cert)
HTML Datasheet
1(ZXMNS3BM832)
Menge Preis
-
Stellvertreter
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