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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
ZXM66P03N8TA
BESCHREIBUNG
MOSFET P-CH 30V 6.25A 8SO
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 6.25A (Ta) 1.56W (Ta) Surface Mount 8-SO
HERSTELLER
Diodes Incorporated
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
6.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
25mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1979 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.56W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ZXM66P03N8DKR
ZXM66P03N8TR-NDR
ZXM66P03N8CT-NDR
ZXM66P03N8DKRINACTIVE
ZXM66P03N8DKR-ND
ZXM66P03N8TR
ZXM66P03N8CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated ZXM66P03N8TA
Dokumente und Medien
Datasheets
1(ZXMN66P03N8)
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Obsolescence/ EOL
()
HTML Datasheet
1(ZXMN66P03N8)
Menge Preis
-
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