English
Spain
Rusia
Italy
ChinaSPN02N60C3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SPN02N60C3
BESCHREIBUNG
MOSFET N-CH 650V 400MA SOT223-4
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4
Package / Case
TO-261-4, TO-261AA
Base Product Number
SPN02N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP000101878
SPN02N60C3XT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPN02N60C3
Dokumente und Medien
Datasheets
1(SPN02N60C3)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SPN02N60C3)
Menge Preis
-
Stellvertreter
Teil Nr. : STN1HNK60
Hersteller. : STMicroelectronics
Verfügbare Menge. : 48,058
Einzelpreis. : $1.07000
Ersatztyp. : Similar
Verfügbare Menge. : 48,058
Einzelpreis. : $1.07000
Ersatztyp. : Similar