Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
BUK661R8-30C,118
BESCHREIBUNG
MOSFET N-CH 30V 120A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 120A (Tc) 263W (Tc) Surface Mount D2PAK
HERSTELLER
Nexperia USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
800

Technische Daten

Mfr
Nexperia USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
168 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
10918 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
263W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
BUK661

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

568-6996-6-ND
BUK661R8-30C,118-ND
BUK661R830C118
1727-5517-6
1727-5517-2
568-6996-2
934063772118
1727-5517-1
568-6996-1
568-6996-1-ND
568-6996-2-ND
568-6996-6

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Nexperia USA Inc. BUK661R8-30C,118

Dokumente und Medien

Datasheets
1(BUK661R8-30C)
PCN Obsolescence/ EOL
1(Mult Dev EOL 28/Dec/2021)
PCN Design/Specification
1(Osiris Leadframe 09/Jun/2014)
PCN Packaging
()
HTML Datasheet
1(BUK661R8-30C)

Menge Preis

-

Stellvertreter

Teil Nr. : IPB80N03S4L02ATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $1.40834
Ersatztyp. : Similar
Teil Nr. : SUM90N03-2M2P-E3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 1,612
Einzelpreis. : $3.63000
Ersatztyp. : Similar