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ChinaNTD6414AN-1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTD6414AN-1G
BESCHREIBUNG
MOSFET N-CH 100V 32A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 32A (Tc) 100W (Tc) Through Hole IPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
37mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Base Product Number
NTD64
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSNTD6414AN-1G
NTD6414AN-1GOS
NTD6414AN-1G-ND
2156-NTD6414AN-1G-ON
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD6414AN-1G
Dokumente und Medien
Datasheets
1(NTD6414AN)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 18/Apr/2013)
HTML Datasheet
1(NTD6414AN)
Menge Preis
-
Stellvertreter
-