Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
BSZ0502NSIATMA1
BESCHREIBUNG
MOSFET N-CH 30V 22A/40A TSDSON
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 22A (Ta), 40A (Tc) 2.1W (Ta), 43W (Tc) Surface Mount PG-TSDSON-8-FL
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
22 Weeks
EDACAD-MODELL
STANDARDPAKET
5,000

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 43W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TSDSON-8-FL
Package / Case
8-PowerTDFN
Base Product Number
BSZ0502

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-BSZ0502NSIATMA1
IFEINFBSZ0502NSIATMA1
SP001288154

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSZ0502NSIATMA1

Dokumente und Medien

Datasheets
1(BSZ0502NSI)
Other Related Documents
1(Part Number Guide)
Environmental Information
1(RoHS Certificate)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSZ0502NSI)
Simulation Models
1(MOSFET OptiMOS™ 30V N-Channel Spice Model)

Menge Preis

QUANTITÄT: 10000
Einzelpreis: $0.57034
Verpackung: Tape & Reel (TR)
MinMultiplikator: 5000
QUANTITÄT: 5000
Einzelpreis: $0.59794
Verpackung: Tape & Reel (TR)
MinMultiplikator: 5000

Stellvertreter

Teil Nr. : CSD17581Q5A
Hersteller. : Texas Instruments
Verfügbare Menge. : 1,034
Einzelpreis. : $0.85000
Ersatztyp. : Similar