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ChinaMJD117-1G
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TEILNUMMER DES HERSTELLERS
MJD117-1G
BESCHREIBUNG
TRANS PNP DARL 100V 2A IPAK
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP - Darlington 100 V 2 A 25MHz 1.75 W Through Hole I-PAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
MJD117-1G Models
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
PNP - Darlington
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (Max)
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
1.75 W
Frequency - Transition
25MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-PAK
Base Product Number
MJD117
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-MJD117-1G-OS
ONSONSMJD117-1G
MJD117-1G-ND
MJD117-1GOS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi MJD117-1G
Dokumente und Medien
Datasheets
1(MJD112,117)
Environmental Information
()
PCN Obsolescence/ EOL
1(Obsolete Notice 15/Dec/2022)
PCN Assembly/Origin
1(Mult Devices 29/Aug/2017)
HTML Datasheet
1(MJD112,117)
EDA Models
1(MJD117-1G Models)
Menge Preis
-
Stellvertreter
Teil Nr. : MJD117T4G
Hersteller. : onsemi
Verfügbare Menge. : 0
Einzelpreis. : $0.81000
Ersatztyp. : MFR Recommended
Verfügbare Menge. : 0
Einzelpreis. : $0.81000
Ersatztyp. : MFR Recommended