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ChinaIRFH5020TR2PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFH5020TR2PBF
BESCHREIBUNG
MOSFET N-CH 200V 5.1A 8PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 5.1A (Ta) Surface Mount 8-PQFN (5x6)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
400
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
5.1A (Ta)
Rds On (Max) @ Id, Vgs
55mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 100 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerVDFN
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP001556316
IRFH5020TR2PBFCT
IRFH5020TR2PBFDKR
IRFH5020TR2PBFTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFH5020TR2PBF
Dokumente und Medien
Datasheets
1(IRFH5020PBF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFH5020PBF)
Menge Preis
-
Stellvertreter
Teil Nr. : TPH6400ENH,L1Q
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 8,000
Einzelpreis. : $1.66000
Ersatztyp. : Similar
Verfügbare Menge. : 8,000
Einzelpreis. : $1.66000
Ersatztyp. : Similar