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ChinaHUF75321P3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HUF75321P3
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 3
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 35A (Tc) 93W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
468
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
UltraFET™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
34mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
93W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-HUF75321P3
FAIFSCHUF75321P3
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUF75321P3
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 468
Einzelpreis: $0.64
Verpackung: Bulk
MinMultiplikator: 468
Verpackung: Bulk
MinMultiplikator: 468
Stellvertreter
-