English
Spain
Rusia
Italy
ChinaIGT40R070D1E8220ATMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IGT40R070D1E8220ATMA1
BESCHREIBUNG
GAN N-CH 400V 31A HSOF-8-3
DETAILIERTE BESCHREIBUNG
N-Channel 400 V 31A (Tc) 125W (Tc) Surface Mount PG-HSOF-8-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
IGT40R070D1E8220ATMA1 Models
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolGaN™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 2.6mA
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
382 pF @ 320 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
0°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-3
Package / Case
8-PowerSFN
Base Product Number
IGT40R070
Umweltverträgliche Exportklassifikationen
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
448-IGT40R070D1E8220ATMA1TR
SP001946158
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IGT40R070D1E8220ATMA1
Dokumente und Medien
Datasheets
1(IGT40R070D1 E8220)
HTML Datasheet
1(IGT40R070D1 E8220)
EDA Models
1(IGT40R070D1E8220ATMA1 Models)
Menge Preis
-
Stellvertreter
-