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ChinaNAND01GW3B2AZA6E
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TEILNUMMER DES HERSTELLERS
NAND01GW3B2AZA6E
BESCHREIBUNG
IC FLASH 1GBIT PARALLEL 63VFBGA
DETAILIERTE BESCHREIBUNG
FLASH - NAND Memory IC 1Gbit Parallel 30 ns 63-VFBGA (9x11)
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,260
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
-
Package
Tray
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile
Memory Format
FLASH
Technology
FLASH - NAND
Memory Size
1Gbit
Memory Organization
128M x 8
Memory Interface
Parallel
Write Cycle Time - Word, Page
30ns
Access Time
30 ns
Voltage - Supply
2.7V ~ 3.6V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
63-TFBGA
Supplier Device Package
63-VFBGA (9x11)
Base Product Number
NAND01
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B1A
HTSUS
8542.32.0071
Andere Namen
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Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/STMicroelectronics NAND01GW3B2AZA6E
Dokumente und Medien
Datasheets
1(NAND01G-B2B, NAND02G-B2C)
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1(Serial EEPROMs)
HTML Datasheet
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