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ChinaFDP8441
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDP8441
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 2
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 23A (Ta), 80A (Tc) 300W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
FDP8441 Models
STANDARDPAKET
187
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
280 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
15000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
FAIFSCFDP8441
2156-FDP8441
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDP8441
Dokumente und Medien
Datasheets
1(Datasheet)
EDA Models
1(FDP8441 Models)
Menge Preis
QUANTITÄT: 187
Einzelpreis: $1.61
Verpackung: Bulk
MinMultiplikator: 187
Verpackung: Bulk
MinMultiplikator: 187
Stellvertreter
-