Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRF620
BESCHREIBUNG
MOSFET N-CH 200V 5.2A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
IRF620 Models
STANDARDPAKET
1,000

Technische Daten

Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
260 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF620

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

IRF620IR
*IRF620

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRF620

Dokumente und Medien

Datasheets
()
PCN Obsolescence/ EOL
1(SIL-018-2015-Rev-0 20/May/2015)
EDA Models
1(IRF620 Models)
Product Drawings
()

Menge Preis

-

Stellvertreter

Teil Nr. : IRF620PBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 322
Einzelpreis. : $62.57000
Ersatztyp. : Direct