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ChinaBUK9Y9R9-80E,115
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BUK9Y9R9-80E,115
BESCHREIBUNG
MOSFET N-CH 80V LFPAK56 PWR-SO8
DETAILIERTE BESCHREIBUNG
N-Channel 80 V Surface Mount LFPAK56, Power-SO8
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
LFPAK56, Power-SO8
Package / Case
SC-100, SOT-669
Base Product Number
BUK9Y9
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK9Y9R9-80E,115
Dokumente und Medien
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
Menge Preis
-
Stellvertreter
-