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ChinaRJK1003DPN-A0#T2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RJK1003DPN-A0#T2
BESCHREIBUNG
MOSFET N-CH 100V 50A TO220ABA
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 50A (Ta) 125W (Ta) Through Hole TO-220ABA
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
25
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4150 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
125W (Ta)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-220ABA
Package / Case
TO-220-3
Base Product Number
RJK1003
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-1161-RJK1003DPN-A0#T2
559-RJK1003DPN-A0#T2
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK1003DPN-A0#T2
Dokumente und Medien
Datasheets
1(RJK1003DPN-A0)
PCN Obsolescence/ EOL
1(RJK 1-25-23)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
Menge Preis
-
Stellvertreter
-