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ChinaBSM50GD120DN2E3226BOSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSM50GD120DN2E3226BOSA1
BESCHREIBUNG
IGBT MOD 1200V 50A 350W
DETAILIERTE BESCHREIBUNG
IGBT Module Three Phase Inverter 1200 V 50 A 350 W Chassis Mount Module
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Obsolete
IGBT Type
-
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
50 A
Power - Max
350 W
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 50A
Current - Collector Cutoff (Max)
1 mA
Input Capacitance (Cies) @ Vce
3.3 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM50G
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
BSM50GD120DN2E3226
SP000100366
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies BSM50GD120DN2E3226BOSA1
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