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ChinaSI3447BDV-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI3447BDV-T1-GE3
BESCHREIBUNG
MOSFET P-CH 12V 4.5A 6TSOP
DETAILIERTE BESCHREIBUNG
P-Channel 12 V 4.5A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
40mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 4.5 V
Vgs (Max)
±8V
FET Feature
-
Power Dissipation (Max)
1.1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
SI3447
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI3447BDV-T1-GE3
Dokumente und Medien
PCN Obsolescence/ EOL
1(SIL-0632014 16/Apr/2014)
HTML Datasheet
1(SI3447BDV)
Menge Preis
-
Stellvertreter
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