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ChinaPMDPB42UN,115
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PMDPB42UN,115
BESCHREIBUNG
MOSFET 2N-CH 20V 3.9A 6HUSON
DETAILIERTE BESCHREIBUNG
Mosfet Array 20V 3.9A 510mW Surface Mount 6-HUSON (2x2)
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
3.9A
Rds On (Max) @ Id, Vgs
50mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
185pF @ 10V
Power - Max
510mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-UDFN Exposed Pad
Supplier Device Package
6-HUSON (2x2)
Base Product Number
PMDPB
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
NEXNXPPMDPB42UN,115
PMDPB42UN,115-ND
568-10758-6
568-10758-1
568-10758-2
2156-PMDPB42UN115-NXTR-ND
2156-PMDPB42UN115
2156-PMDPB42UN,115-ND
934066485115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/NXP USA Inc. PMDPB42UN,115
Dokumente und Medien
Datasheets
1(PMDPB42UN)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 25/Dec/2013)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PMDPB42UN)
Menge Preis
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