Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SIS436DN-T1-GE3
BESCHREIBUNG
MOSFET N-CH 25V 16A PPAK 1212-8
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000

Technische Daten

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
855 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 27.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SIS436

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SIS436DN-T1-GE3-ND
SIS436DN-T1-GE3TR
SIS436DN-T1-GE3CT
SIS436DNT1GE3
SIS436DN-T1-GE3DKR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIS436DN-T1-GE3

Dokumente und Medien

Datasheets
1(SIS436DN)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SIS436DN)

Menge Preis

-

Stellvertreter

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