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TEILNUMMER DES HERSTELLERS
PBSS4160QA147
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 60 V 1 A 180MHz 1 W Surface Mount DFN1010D-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,163
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
245mV @ 50mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
230 @ 100mA, 2V
Power - Max
1 W
Frequency - Transition
180MHz
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Supplier Device Package
DFN1010D-3
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-PBSS4160QA147
NEXNXPPBSS4160QA147
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. PBSS4160QA147
Dokumente und Medien
Datasheets
1(PBSS4160QA)
HTML Datasheet
1(PBSS4160QA)
Menge Preis
-
Stellvertreter
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