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ChinaTK370A60F,S4X(S
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
TK370A60F,S4X(S
BESCHREIBUNG
MOSFET N-CH
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 15A (Ta) 45W (Tc) Through Hole TO-220SIS
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSIX
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
370mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
4V @ 2.04mA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
45W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
264-TK370A60F,S4X(S-ND
264-TK370A60F,S4X(S
264-TK370A60FS4X(S
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK370A60F,S4X(S
Dokumente und Medien
Datasheets
1(TK370A60F)
Menge Preis
-
Stellvertreter
-