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BC857AQAZ
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Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 280 mW Surface Mount DFN1010D-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
9,947
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
45 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA, 5V
Power - Max
280 mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Supplier Device Package
DFN1010D-3
Base Product Number
BC857
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
NEXNEXBC857AQAZ
2156-BC857AQAZ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. BC857AQAZ
Dokumente und Medien
Datasheets
1(BC857AQAZ Datasheet)
Menge Preis
QUANTITÄT: 9947
Einzelpreis: $0.03
Verpackung: Bulk
MinMultiplikator: 9947
Verpackung: Bulk
MinMultiplikator: 9947
Stellvertreter
-