English
Spain
Rusia
Italy
ChinaAPTM120U10SCAVG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APTM120U10SCAVG
BESCHREIBUNG
MOSFET N-CH 1200V 116A SP6
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 116A (Tc) 3290W (Tc) Chassis Mount SP6
HERSTELLER
Microchip Technology
STANDARD LEADTIME
42 Weeks
EDACAD-MODELL
APTM120U10SCAVG Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
POWER MOS 7®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
116A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
120mOhm @ 58A, 10V
Vgs(th) (Max) @ Id
5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
1100 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
28900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3290W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SP6
Package / Case
SP6
Base Product Number
APTM120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microchip Technology APTM120U10SCAVG
Dokumente und Medien
Datasheets
1(APTM120U10SCAVG)
Environmental Information
()
PCN Assembly/Origin
1(Assembly Site 27/Jan/2023)
HTML Datasheet
1(APTM120U10SCAVG)
EDA Models
1(APTM120U10SCAVG Models)
Menge Preis
QUANTITÄT: 3
Einzelpreis: $417.53333
Verpackung: Bulk
MinMultiplikator: 3
Verpackung: Bulk
MinMultiplikator: 3
Stellvertreter
-