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ChinaBUK953R5-60E,127
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BUK953R5-60E,127
BESCHREIBUNG
MOSFET N-CH 60V 120A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 120A (Ta) 293W (Ta) Through Hole TO-220AB
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
333
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Ta)
Rds On (Max) @ Id, Vgs
3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
13490 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
293W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-BUK953R5-60E127
NEXNXPBUK953R5-60E,127
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK953R5-60E,127
Dokumente und Medien
Datasheets
1(BUK953R5-60E,127)
Menge Preis
QUANTITÄT: 333
Einzelpreis: $0.9
Verpackung: Tube
MinMultiplikator: 333
Verpackung: Tube
MinMultiplikator: 333
Stellvertreter
-