Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SI5441DC-T1-GE3
BESCHREIBUNG
MOSFET P-CH 20V 3.9A 1206-8
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 3.9A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
55mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 4.5 V
Vgs (Max)
±12V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
1206-8 ChipFET™
Package / Case
8-SMD, Flat Lead
Base Product Number
SI5441

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI5441DC-T1-GE3

Dokumente und Medien

Datasheets
1(SI5441DC)
Environmental Information
()
PCN Obsolescence/ EOL
1(SIL-0632014 16/Apr/2014)
HTML Datasheet
1(SI5441DC)

Menge Preis

-

Stellvertreter

Teil Nr. : SI5457DC-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 28,448
Einzelpreis. : $0.55000
Ersatztyp. : Similar