Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
104mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
5.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
571 pF @ 500 V
Power Dissipation (Max)
134W
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Base Product Number
SCT3080