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ChinaIXFQ8N85X
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXFQ8N85X
BESCHREIBUNG
MOSFET N-CH 850V 8A TO3P
DETAILIERTE BESCHREIBUNG
N-Channel 850 V 8A (Tc) 200W (Tc) Through Hole TO-3P
HERSTELLER
IXYS
STANDARD LEADTIME
47 Weeks
EDACAD-MODELL
IXFQ8N85X Models
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
IXYS
Series
HiPerFET™, Ultra X
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
850 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
654 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
IXFQ8N85
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFQ8N85X
Dokumente und Medien
Datasheets
1(IXFA8N85XHV, IXFP,Q8N85X)
Environmental Information
1(Ixys IC REACH)
PCN Design/Specification
1(Multiple Devices Material 23/Jun/2020)
HTML Datasheet
1(IXFA8N85XHV, IXFP,Q8N85X)
EDA Models
1(IXFQ8N85X Models)
Menge Preis
QUANTITÄT: 300
Einzelpreis: $4.02637
Verpackung: Tube
MinMultiplikator: 300
Verpackung: Tube
MinMultiplikator: 300
Stellvertreter
-