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ChinaBSP322PL6327HTSA1
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TEILNUMMER DES HERSTELLERS
BSP322PL6327HTSA1
BESCHREIBUNG
MOSFET P-CH 100V 1A SOT223-4
DETAILIERTE BESCHREIBUNG
P-Channel 100 V 1A (Tc) 1.8W (Ta) Surface Mount PG-SOT223-4-21
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
800mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
1V @ 380µA
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
372 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4-21
Package / Case
TO-261-4, TO-261AA
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
BSP322P L6327
SP000212229
2156-BSP322PL6327HTSA1-ITTR
BSP322P L6327-ND
BSP322PL6327HTSA1TR
INFINFBSP322PL6327HTSA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSP322PL6327HTSA1
Dokumente und Medien
Datasheets
1(BSP322P)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
Menge Preis
-
Stellvertreter
Teil Nr. : BSP322PH6327XTSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 3,293
Einzelpreis. : $0.94000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 3,293
Einzelpreis. : $0.94000
Ersatztyp. : Parametric Equivalent