English
Spain
Rusia
Italy
ChinaBSC152N10NSFG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSC152N10NSFG
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 9.4A (Ta), 63A (Tc) 114W (Tc) Surface Mount PG-TDSON-8
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
248
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™2
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 72µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8
Package / Case
8-PowerTDFN
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
INFINFBSC152N10NSFG
2156-BSC152N10NSFG
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC152N10NSFG
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 247
Einzelpreis: $1.22
Verpackung: Bulk
MinMultiplikator: 247
Verpackung: Bulk
MinMultiplikator: 247
Stellvertreter
-