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ChinaAPTML202UM18R010T3AG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APTML202UM18R010T3AG
BESCHREIBUNG
MOSFET 2N-CH 200V 109A SP3
DETAILIERTE BESCHREIBUNG
Mosfet Array 200V 109A (Tc) 480W Chassis Mount SP3
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
109A (Tc)
Rds On (Max) @ Id, Vgs
19mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
9880pF @ 25V
Power - Max
480W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP3
Supplier Device Package
SP3
Base Product Number
APTML202
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
APTML202UM18R010T3AG-ND
150-APTML202UM18R010T3AG
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microsemi Corporation APTML202UM18R010T3AG
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 01/Nov/2017)
Menge Preis
-
Stellvertreter
-