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ChinaSIE818DF-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIE818DF-T1-GE3
BESCHREIBUNG
MOSFET N-CH 75V 60A 10POLARPAK
DETAILIERTE BESCHREIBUNG
N-Channel 75 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3200 pF @ 38 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
10-PolarPAK® (L)
Package / Case
10-PolarPAK® (L)
Base Product Number
SIE818
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIE818DFT1GE3
SIE818DF-T1-GE3DKR
SIE818DF-T1-GE3CT
SIE818DF-T1-GE3TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIE818DF-T1-GE3
Dokumente und Medien
Datasheets
1(SIE818DF)
PCN Obsolescence/ EOL
1(OBS NOTICE 29/Nov/2023)
HTML Datasheet
1(SIE818DF)
Menge Preis
QUANTITÄT: 3000
Einzelpreis: $1.86315
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000
Stellvertreter
-