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ChinaGPAS1006 MNG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
GPAS1006 MNG
BESCHREIBUNG
DIODE GEN PURP 800V 10A TO263AB
DETAILIERTE BESCHREIBUNG
Diode 800 V 10A Surface Mount TO-263AB (D2PAK)
HERSTELLER
Taiwan Semiconductor Corporation
STANDARD LEADTIME
EDACAD-MODELL
GPAS1006 MNG Models
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
800 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.1 V @ 10 A
Speed
Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
5 µA @ 800 V
Capacitance @ Vr, F
50pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AB (D2PAK)
Operating Temperature - Junction
-55°C ~ 150°C
Base Product Number
GPAS1006
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
GPAS1006 MNG-ND
GPAS1006MNG
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Taiwan Semiconductor Corporation GPAS1006 MNG
Dokumente und Medien
Datasheets
1(GP1601 - GP1607)
Environmental Information
()
HTML Datasheet
1(GP1601 - GP1607)
EDA Models
1(GPAS1006 MNG Models)
Menge Preis
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Stellvertreter
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