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ChinaFQAF19N60
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQAF19N60
BESCHREIBUNG
MOSFET N-CH 600V 11.2A TO3PF
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 11.2A (Tc) 120W (Tc) Through Hole TO-3PF
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
114
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
11.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
120W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCFQAF19N60
2156-FQAF19N60-FS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQAF19N60
Dokumente und Medien
Datasheets
1(FQAF19N60)
Menge Preis
QUANTITÄT: 114
Einzelpreis: $2.65
Verpackung: Tube
MinMultiplikator: 114
Verpackung: Tube
MinMultiplikator: 114
Stellvertreter
-