English
Spain
Rusia
Italy
ChinaIRFD9110
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFD9110
BESCHREIBUNG
0.7A 100V 1.200 OHM P-CHANNEL
DETAILIERTE BESCHREIBUNG
P-Channel 100 V 700mA (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
807
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 420mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-DIP, Hexdip, HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Base Product Number
IRFD9110
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-IRFD9110
HARHARIRFD9110
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRFD9110
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 807
Einzelpreis: $0.37
Verpackung: Bulk
MinMultiplikator: 807
Verpackung: Bulk
MinMultiplikator: 807
Stellvertreter
-