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ChinaIRLI520N
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TEILNUMMER DES HERSTELLERS
IRLI520N
BESCHREIBUNG
MOSFET N-CH 100V 8.1A TO220AB FP
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 8.1A (Tc) 30W (Tc) Through Hole PG-TO220-FP
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLI520N
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1(IRLI520N)
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Menge Preis
-
Stellvertreter
Teil Nr. : IRLI520GPBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $0.91769
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.91769
Ersatztyp. : Similar