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ChinaGD30MPS06J
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TEILNUMMER DES HERSTELLERS
GD30MPS06J
BESCHREIBUNG
DIODE SIL CARB 650V 51A TO263-7
DETAILIERTE BESCHREIBUNG
Diode 650 V 51A Surface Mount TO-263-7
HERSTELLER
GeneSiC Semiconductor
STANDARD LEADTIME
18 Weeks
EDACAD-MODELL
GD30MPS06J Models
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
GeneSiC Semiconductor
Series
SiC Schottky MPS™
Package
Tube
Product Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
51A
Speed
No Recovery Time > 500mA (Io)
Capacitance @ Vr, F
735pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Supplier Device Package
TO-263-7
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
GD30MPS06
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/GeneSiC Semiconductor GD30MPS06J
Dokumente und Medien
Datasheets
1(GD30MPS06J)
EDA Models
1(GD30MPS06J Models)
Menge Preis
QUANTITÄT: 1
Einzelpreis: $6.42
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-