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ChinaIPD160N04LGBTMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPD160N04LGBTMA1
BESCHREIBUNG
MOSFET N-CH 40V 30A TO252-3
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 30A (Tc) 31W (Tc) Surface Mount PG-TO252-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
31W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Base Product Number
IPD160N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPD160N04L G
IPD160N04L G-ND
SP000387933
IPD160N04LGBTMA1TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD160N04LGBTMA1
Dokumente und Medien
Datasheets
1(IPD160N04L G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPD160N04L G)
Menge Preis
-
Stellvertreter
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Ersatztyp. : Similar