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ChinaPDTC123EEF,115
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PDTC123EEF,115
BESCHREIBUNG
TRANS PREBIAS NPN 50V 0.1A SC89
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 mW Surface Mount SC-89
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
SC-89, SOT-490
Supplier Device Package
SC-89
Base Product Number
PDTC123
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
934058178115
PDTC123EEF115
568-2151-2
PDTC123EEF T/R
568-2151-1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP USA Inc. PDTC123EEF,115
Dokumente und Medien
Datasheets
1(PDTC123EM,315 Datasheet)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PDTC123EM,315 Datasheet)
Menge Preis
-
Stellvertreter
-