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ChinaVP1008B
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
VP1008B
BESCHREIBUNG
MOSFET P-CH 100V 790MA TO39
DETAILIERTE BESCHREIBUNG
P-Channel 100 V 790mA (Ta) 6.25W (Ta) Through Hole TO-39
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
790mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-39
Package / Case
TO-205AD, TO-39-3 Metal Can
Base Product Number
VP1008
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix VP1008B
Dokumente und Medien
Datasheets
1(VP0808B/L/M,VP1008B/L/M)
PCN Obsolescence/ EOL
1(Mult Device OBS Update 15/May/2017)
PCN Design/Specification
1(Wire Bond 01/Jul/2016)
PCN Assembly/Origin
1(SIL-062-2014-Rev-0 30/May/2014)
Menge Preis
-
Stellvertreter
-