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TEILNUMMER DES HERSTELLERS
BSP613PL6327HUSA1
BESCHREIBUNG
MOSFET P-CH 60V 2.9A SOT223-4
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
875 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4
Package / Case
TO-261-4, TO-261AA
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
BSP613P L6327
BSP613PL6327INTR
BSP613PL6327XT
BSP613PL6327HUSA1DKR
BSP613PL6327INDKR-ND
BSP613PL6327
BSP613PL6327INCT-ND
BSP613P L6327-ND
BSP613PL6327INCT
BSP613PL6327HUSA1TR
BSP613PL6327INDKR
BSP613PL6327HUSA1CT
BSP613PL6327INTR-ND
SP000089224
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSP613PL6327HUSA1
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1(BSP613P)
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Menge Preis
-
Stellvertreter
Teil Nr. : BSP613PH6327XTSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 6,432
Einzelpreis. : $1.36000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 6,432
Einzelpreis. : $1.36000
Ersatztyp. : Parametric Equivalent
Teil Nr. : ZXMP6A17GTA
Hersteller. : Diodes Incorporated
Verfügbare Menge. : 60,562
Einzelpreis. : $0.60000
Ersatztyp. : Similar
Verfügbare Menge. : 60,562
Einzelpreis. : $0.60000
Ersatztyp. : Similar