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ChinaNP80N04NHE-S18-AY
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NP80N04NHE-S18-AY
BESCHREIBUNG
MOSFET N-CH 40V 80A TO262
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 80A (Tc) 1.8W (Ta), 120W (Tc) Through Hole TO-262
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
151
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 120W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
RENRNSNP80N04NHE-S18-AY
2156-NP80N04NHE-S18-AY-RE
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation NP80N04NHE-S18-AY
Dokumente und Medien
Datasheets
1(NP80N04NHE-S18-AY)
Menge Preis
QUANTITÄT: 151
Einzelpreis: $2
Verpackung: Tube
MinMultiplikator: 151
Verpackung: Tube
MinMultiplikator: 151
Stellvertreter
-