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ChinaKSB1116ALBU
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TEILNUMMER DES HERSTELLERS
KSB1116ALBU
BESCHREIBUNG
TRANS PNP 60V 1A TO92-3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 60 V 1 A 120MHz 750 mW Through Hole TO-92-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
KSB1116ALBU Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA, 2V
Power - Max
750 mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
KSB11
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi KSB1116ALBU
Dokumente und Medien
Datasheets
1(KSB1116/1116A)
Environmental Information
()
HTML Datasheet
1(KSB1116/1116A)
EDA Models
1(KSB1116ALBU Models)
Menge Preis
-
Stellvertreter
-