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ChinaSI5997DU-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI5997DU-T1-GE3
BESCHREIBUNG
MOSFET 2P-CH 30V 6A PPAK CHIPFET
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 6A 10.4W Surface Mount PowerPAK® ChipFet Dual
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
SI5997DU-T1-GE3 Models
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
6A
Rds On (Max) @ Id, Vgs
54mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
430pF @ 15V
Power - Max
10.4W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® ChipFET™ Dual
Supplier Device Package
PowerPAK® ChipFet Dual
Base Product Number
SI5997
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI5997DU-T1-GE3TR
SI5997DU-T1-GE3-ND
SI5997DU-T1-GE3CT
SI5997DU-T1-GE3DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI5997DU-T1-GE3
Dokumente und Medien
Datasheets
1(SI5997DU-T1-GE3)
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
HTML Datasheet
1(SI5997DU-T1-GE3)
EDA Models
1(SI5997DU-T1-GE3 Models)
Menge Preis
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Stellvertreter
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