English
Spain
Rusia
Italy
ChinaIRF100P219XKMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF100P219XKMA1
BESCHREIBUNG
MOSFET N-CH 100V TO247AC
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 203A (Tc) 341W (Tc) Through Hole TO-247AC
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
IRF100P219XKMA1 Models
STANDARDPAKET
25
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
StrongIRFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
203A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12020 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
341W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Base Product Number
IRF100
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP001619552
IRF100P219
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF100P219XKMA1
Dokumente und Medien
Datasheets
()
Other Related Documents
1(IR Part Numbering System)
HTML Datasheet
()
EDA Models
1(IRF100P219XKMA1 Models)
Simulation Models
1(IRF100P219 Saber File)
Menge Preis
-
Stellvertreter
Teil Nr. : IRF100P219AKMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 358
Einzelpreis. : $7.27000
Ersatztyp. : Direct
Verfügbare Menge. : 358
Einzelpreis. : $7.27000
Ersatztyp. : Direct