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ChinaFQA22P10
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQA22P10
BESCHREIBUNG
MOSFET P-CH 100V 24A TO3PN
DETAILIERTE BESCHREIBUNG
P-Channel 100 V 24A (Tc) 150W (Tc) Through Hole TO-3PN
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQA22P10 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA2
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQA22P10
Dokumente und Medien
Datasheets
1(FQA22P10)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(FQA22P10)
EDA Models
1(FQA22P10 Models)
Menge Preis
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Stellvertreter
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